| 翻訳と辞書 |
| Ion beam induced deposition ： ウィキペディア英語版 |
Electron beam-induced deposition
Electron beam-induced deposition (EBID) is a process of decomposing gaseous molecules by electron beam leading to deposition of non-volatile fragments onto a nearby substrate. The electron beam is usually provided by a scanning electron microscope that results in high spatial accuracy (below one nanometer) and possibility to produce free-standing, three-dimensional structures.
== Process ==
Focused electron beam of scanning electron microscope (SEM) or scanning transmission electron microscope (STEM) is commonly used. Focused ion beam can be applied instead, but then the process is called ion beam-induced deposition (IBID). The precursor material is gas, liquid or solid. Liquid or solids are gasified prior to deposition, usually through vaporization or sublimation, and introduced, at accurately controlled rate, into the high-vacuum chamber of electron microscope. Alternatively, solid precursor is sublimated by the electron beam itself.
When deposition occurs at high temperature or involves corrosive gases, specially designed deposition chamber is used; it is isolated from the microscope, and the beam is introduced into it through a micrometre-sized orifice. Small orifice size maintains differential pressure in the microscope (vacuum) and deposition chamber (no vacuum). Such deposition mode has been used for EBID of diamond.〔〔"Electron beam activated plasma chemical vapour deposition of polycrystalline diamond films" (Phys. Stat. Solidi (a) 151 (1995) 107 )〕
The electron beam is scanned over desired shape resulting in deposition of material. The scanning is usually computer controlled. The deposition rate depends on the partial pressure and is of the order 10 nm/s.
抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』
■ウィキペディアで「Electron beam-induced deposition」の詳細全文を読む
スポンサード リンク
| 翻訳と辞書 : 翻訳のためのインターネットリソース |
Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.
|
|